AO4940
Asymmetric Dual N-Channel MOSFET
General Description
The AO4940 uses advanced trench technology to provide
excellent R
DS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters.A
monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
Features
FET1
FET2
VDS(V) = 30V
ID=7.8A
VDS (V) = 30V
ID = 9.1A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 15mΩ
RDS(ON) < 23mΩ
< 21mΩ
< 32mΩ
D1
D2
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
D2
D2
G1
S1
G2
1
2
3
4
8
S2/D1
S2/D1
S2/D1
7
6
5
G1
G2
S1
S2
FET1
FET2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Max FET1
Symbol 10 sec
Max FET2
Parameter
Drain-Source Voltage
Steady-State
10 sec
Steady-State
Units
VDS
VGS
30
30
V
V
Gate-Source Voltage
±20
±20
TA=25°C
TA=70°C
9.1
7.3
7.6
6.1
7.8
6.3
6.5
5.2
Continuous Drain
Current AF
Pulsed Drain Current B
Avalanche Current B
A
IDSM
IDM
100
17
64
9
A
A
IAR
Repetitive avalanche energy L=0.3mH B
EAR
43
12
mJ
TA=25°C
Power DissipationA
TA=70°C
2
1.4
0.9
2
1.4
0.9
PDSM
W
°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics FET1(Intergrated Schottky Diode)
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
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