Datasheet > AO5803E

AO5803E

更新时间： 2024-11-21 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	117K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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AO5803E 数据手册

AO5803E

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO5803E/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge, and

operation with gate voltages as low as 1.8V, in the

small SC89-6L footprint. It can be used as load

switching, and wide variety of FET applications.

AO5803E and AO5803EL are electrically identical.

V_DS(V) = -20V

I_D= -0.6A (VGS = -4.5V)

R_DS(ON)< 0.8Ω (V_GS= -4.5V)

_DS(ON)< 1.0Ω (V_GS= -2.5V)

R_DS(ON)< 1.25Ω (V_GS= -1.8V)

-RoHS compliant

-AO5803EL is Halogen Free

ESD PROTECTED

SC-89-6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±8

-0.6

T_A=25°C

T_A=70°C

Continuous Drain

Current ^{A, F}

I_D

-0.4

Pulsed Drain Current ^B

I_DM

-3

T_A=25°C

T_A=70°C

0.4

P_D

°C

Power Dissipation ^A

0.24

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

275

360

300

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

330

450

350

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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