Datasheet > AO4952

AO4952

更新时间： 2024-11-21 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
9页	869K
描述
SOP-8

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数据手册

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AO4952 数据手册

AO4952

Dual Asymmetric N-Channel MOSFET

FEATURES

 Very Low RDS(on) at 4.5V VGS:VDS=30V,ID=11A,RDS(ON)≤10.5mΩ@VGS=10V

VDS=30V,ID=11A,RDS(ON)≤11.5mΩ@VGS=10V

 Latest Trench Power AlphaMOS (αMOS LV) technology

 Integrated Schottky Diode (SRFET) on Low-Side

 Low Gate Charge and High Current Capability

MECHANICAL DATA

SOP-8



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain-source voltage

Gate-source voltage

Max Q1

Max Q2

Unit

±20

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

Avalanche energy L=0.1mH

I_DM

I_AS,I_AR

E_AS,E_AR

T_A= 25°C

T_A= 70°C

Power dissipation

P_D

1.3

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

°C/W

°C

150

Storage temperature

-55 ~+150

Q1 ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

V(BR)DSS*

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

VGS=0V, ID=250μA

I_DSS

I_GSS

0.5

±100

2.5

mA V_DS=30V,

nA V_DS=0V,

VGS=0V

V^GS=±20V

VDS=VGS, ID=250μA

V_DS=5V,

VGS=10V

VGS=10V, ID=11A

VGS=10V, ID=11A, TJ=125°C

V^GS=4.5V, I^D=9A

VDS=5V, ID=6A

V_GS(th)

1.4

1.8

mΩ

On-State Drain Current

I_D(ON)

8.3

11.8

10.5

12.2 15.5

Drain-source on-resistance

R_DS(ON)*

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

0.45 0.65

IS=0.2A, VGS=0V

2.5

605

275

4.9

10.2

2.3

V_{DS=15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

VGS=4.5V,VDS=15V,ID=11A

Q_g

V^GS=10V,V^DS=15V,I^D=11A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=15V,

RGEN=3Ω,RL=1.36Ω

17.5

12.5

t_rr

Q_rr

IF=11A, dI/dt=100A/ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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