Datasheet > AO4F800

AO4F800

更新时间： 2024-09-16 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	141K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO4F800 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO4F800 数据手册

AO4F800

Asymmetric Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO4F800 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in DC-

DC converters. Standard Product AOF800 is Pb-free

(meets ROHS & Sony 259 specifications). AOF800L

is a Green Product ordering option. AOF800 and

AOF800L are electrically identical.

V_DS(V) = 30V

I_D= 8.3A (V_GS= 10V) I_D=17.7A

R_DS(ON)< 18mΩ

R_DS(ON)< 27mΩ

< 6.5mΩ

< 8.5mΩ

(V_GS= 10V)

(V_GS= 4.5V)

D2/S1

SOIC-14

D2/S1

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max Q1

Max Q2

Units

V_DS

Drain-Source Voltage

±20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current^B

T_A=25°C

T_A=70°C

8.3

17.7

I_D

6.7

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

2.1

T_J, T_STG

Symbol

R_θJA

Junction and Storage Temperature Range

-55 to 150

°C

Parameter: Thermal Characteristics MOSFET Q1

Typ

Max

62.5

110

Units

Maximum Junction-to-Ambient^A

t ≤ 10s

Maximum Junction-to-Ambient^A

Steady-State

°C/W

Maximum Junction-to-Lead^C

Steady-State

R_θJL

Parameter: Thermal Characteristics MOSFET Q2

Symbol

R_θJA

Typ

Max

Units

Maximum Junction-to-Ambient^A

t ≤ 10s

Maximum Junction-to-Ambient^A

Steady-State

°C/W

Maximum Junction-to-Lead^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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