Datasheet > AO4948

AO4948

更新时间： 2024-11-20 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
8页	620K
描述
30V Dual N-Channel MOSFET

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AO4948 数据手册

AO4948

30V Dual N-Channel MOSFET

SRFET

General Description

Product Summary

The AO4948 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. The two MOSFETs

make a compact and efficient switch and synchronous

rectifier combination for use in DC-DC converters. A

monolithically integrated Schottky diode in parallel with

the synchronous MOSFET to boost efficiency further.

FET1(N-Channel)

FET2(N-Channel)

V_DS= 30V

30V

I_D= 8.8A (V_GS=10V)

R_DS(ON)

8A (V_GS=10V)

R_DS(ON)

< 16mꢀ (V_GS=10V)

< 22mꢀ (V_GS=4.5V)

< 19mꢀ (V_GS=10V)

< 28mꢀ (V_GS=4.5V)

ESD Protected

100% UIS Tested

100% R_gTested

100% UIS Tested

100% R_gTested

SOIC-8

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max FET1

Max FET2

Units

Drain-Source Voltage

V_DS

±20

Gate-Source Voltage

V_GS

±20

8.8

7.1

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

6.5

I_DM

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.3mH ^C

T_A=25°C

P_D

°C

Power Dissipation ^B

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 3: Dec 2010

www.aosmd.com

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