Datasheet > AO4940_12

AO4940_12

更新时间： 2024-09-15 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	345K
描述
Asymmetric Dual N-Channel MOSFET

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AO4940_12 数据手册

AO4940

Asymmetric Dual N-Channel MOSFET

SRFET

General Description

Product Summary

The AO4940 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. The two MOSFETs

make a compact and efficient switch and synchronous

rectifier combination for use in DC-DC converters. A

monolithically integrated Schottky diode in parallel with the

synchronous MOSFET to boost efficiency further.

FET1

FET2

V_DS(V) = 30V

I_D=7.8A

< 21mΩ

< 32mΩ

V_DS(V) = 30V

I_D= 9.1A

R_DS(ON)< 15mΩ

R_DS(ON)< 23mΩ

(V_GS= 10V)

(V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

SRFET^TM

Top View

Bottom View

Soft Recovery MOSFET:

Integrated Schottky Diode

Top View

S2/D1

FET1

FET2

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Max FET1

Symbol 10 sec

Max FET2

Parameter

Drain-Source Voltage

Steady-State

10 sec

Steady-State

Units

V_DS

V_GS

Gate-Source Voltage

±20

T_A=25°C

T_A=70°C

9.1

7.3

7.6

6.1

7.8

6.3

6.5

5.2

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

Avalanche Current ^B

I_DSM

I_DM

100

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

T_A=25°C

Power Dissipation^A

T_A=70°C

1.4

0.9

1.4

0.9

P_DSM

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics FET1(Intergrated Schottky Diode)

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Thermal Characteristics FET2

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

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