Datasheet > AO5401EL

AO5401EL

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	153K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO5401EL 数据手册

AO5401E

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO5401E/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications.AO5401E and AO5401EL are electrically

identical.

V_DS(V) = -20V

I_D= -0.5 A (V_GS= -4.5V)

R_DS(ON)< 0.8Ω (V_GS= -4.5V)

R_DS(ON)< 1Ω (V_GS= -2.5V)

R_DS(ON)< 1.3Ω (V_GS= -1.8V)

-RoHS compliant

-AO5401EL is Halogen Free

ESD PROTECTED!

SC89-3L

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

10 Sec

Steady State

Units

Drain-Source Voltage

V_DS

-20

±8

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

-0.5

Continuous Drain

Current ^AF

I_D

-0.45

-0.40

Pulsed Drain Current ^B

I_DM

-1

T_A=25°C

T_A=70°C

0.38

0.24

0.28

0.18

P_D

Power Dissipation ^A

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Symbol

Typ

275

360

300

Max

330

450

350

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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