Datasheet > AO4944

AO4944

更新时间： 2024-11-20 04:06:19

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	115K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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AO4944 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81

AO4944 数据手册

AO4944

Dual N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET^TMThe AO4944 uses advanced trench

technology with a monolithically integrated Schottky

diode to provide excellent R_DS(ON)and low gate

charge. This device is suitable for use as a low and

high side switch in SMPS and general purpose

applications. Standard product AO4944 is Pb-free

(meets ROHS & Sony 259 specifications).

V_DS(V) = 30V

I_D= 8.6A

(V_GS= 10V)

R_DS(ON)< 16mΩ (V_GS= 10V)

R_DS(ON)< 20mΩ (V_GS= 4.5V)

D 1

D 2

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

SOIC-8

S 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

Avalanche Current ^B

±12

T_A=25°C

T_A=70°C

8.6

I_D

6.9

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.3mH ^B

T_A=25°C

P_D

Power Dissipation

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

Maximum Junction-to-Ambient

R_θJA

Steady-State

Maximum Junction-to-Ambient

R_θJL

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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