Datasheet > AO5600EL

AO5600EL

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	944K
描述
Complementary Enhancement Mode Field Effect Transistor

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AO5600EL 数据手册

AO5600E

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

The AO5600E/L uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used

in H-bridge, Inverters and other

applications.AO5600E and AO5600EL are electrically

identical.

V_DS(V) = 20V, I_D= 0.6A (V_GS=4.5V)

R_DS(ON)< 0.65Ω (V_GS= 4.5V)

_DS(ON)< 0.75Ω (V_GS= 2.5V)

_DS(ON)< 0.95Ω (V_GS= 1.8V)

p-channel

_DS(V) = -20V, I_D= -0.5A (V_GS=-4.5V)

R_DS(ON)< 0.8Ω (V_GS= -4.5V)

_DS(ON)< 1.0Ω (V_GS= -2.5V)

-RoHS compliant

-AO5600EL is Halogen Free

ESD PROTECTED!

R_DS(ON)< 1.3Ω (V_GS= -1.8V)

SC-89-6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel Max p-channel

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

Continuous Drain

Current ^B,H

V_GS

±8

T_C=25°C

0.6

0.4

-0.5

-0.38

-1

T_C=100°C

I_D

Pulsed Drain Current ^B

I_DM

T_C=25°C

0.38

0.24

0.38

0.24

P_D

Power Dissipation

T_C=100°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

275

360

300

Max

330

450

350

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

n-ch

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

p-ch

275

360

300

330

450

350

°C/W

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7...9

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