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AO4924 PDF预览

AO4924

更新时间: 2024-11-17 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 158K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4924 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.02
Base Number Matches:1

AO4924 数据手册

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AO4924  
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor  
TM  
SRFET  
General Description  
Features  
FET1  
The AO4924 uses advanced trench technology to  
provide excellent R DS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters. A monolithically integrated Schottky diode in  
parallel with the synchronous MOSFET to boost  
efficiency further. Standard Product AO4924 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4924L is  
a Green Product ordering option. AO4924L and AO4924  
are electrically identical.  
FET2  
VDS(V) = 30V  
ID=7.3A  
VDS (V) = 30V  
ID = 9A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
R
DS(ON) < 15.8m<24mΩ  
DS(ON) < 19.5m<29mΩ  
R
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
SOIC-8  
SRFET TM  
1
2
3
4
8
7
6
5
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max FET1  
Max FET2  
Units  
VDS  
Drain-Source Voltage  
30  
30  
±12  
7.3  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain Current B  
Avalanche Current B  
±12  
9.0  
V
TA=25°C  
TA=70°C  
A
IDSM  
IDM  
7.2  
5.9  
40  
40  
IAR  
16  
12  
A
Repetitive avalanche energy L=0.3mH B  
EAR  
38  
22  
mJ  
TA=25°C  
2.0  
2.0  
PDSM  
W
Power Dissipation  
TA=70°C  
1.3  
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
°C  
Thermal Characteristics FET1  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
RθJL  
Steady-State  
Steady-State  
74  
32  
40  
Thermal Characteristics FET2  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
RθJL  
Steady-State  
Steady-State  
74  
Maximum Junction-to-Lead C  
32  
40  
Alpha & Omega Semiconductor, Ltd.  

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