Datasheet > AO4924

AO4924

更新时间： 2024-10-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	772K
描述
Asymmetric Dual N-Channel MOSFET

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AO4924 数据手册

AO4924

Asymmetric Dual N-Channel MOSFET

General Description

The AO4924 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

and synchronous rectifier combination for use in DC

diode in parallel with the synchronous MOSFET to

two MOSFETs make a compact and efficient switch

DC converters. A monolithically integrated Schottky

boost efficiency further.

Features

FET1

V_DS(V) = 30V

I_D= 9A

FET2

V_DS(V) = 30V

I_D=7.3A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 15.8mΩ <24mΩ

R_DS(ON)< 19.5mΩ <29mΩ

SOIC-8

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max FET1

Max FET2

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±12

9.0

±12

7.3

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^B

I_DSM

I_DM

7.2

5.9

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

T_A=25°C

2.0

P_DSM

°C

T_A=70°C

Power Dissipation

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics FET1

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Lead ^C

Thermal Characteristics FET2

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Lead ^C

1/9

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