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AO4924 PDF预览

AO4924

更新时间: 2024-11-17 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
9页 772K
描述
Asymmetric Dual N-Channel MOSFET

AO4924 数据手册

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AO4924  
Asymmetric Dual N-Channel MOSFET  
General Description  
The AO4924 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. The  
-
and synchronous rectifier combination for use in DC  
diode in parallel with the synchronous MOSFET to  
two MOSFETs make a compact and efficient switch  
DC converters. A monolithically integrated Schottky  
boost efficiency further.  
Features  
FET1  
VDS (V) = 30V  
ID = 9A  
FET2  
VDS(V) = 30V  
ID=7.3A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON) < 15.8m<24mΩ  
RDS(ON) < 19.5m<29mΩ  
SOIC-8  
D2  
D1  
SRFETTM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
Top View  
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
1
2
3
4
8
7
6
5
G2  
G1  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max FET1  
Max FET2  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
30  
V
V
VGS  
±12  
9.0  
±12  
7.3  
TA=25°C  
TA=70°C  
Continuous Drain  
Current A  
Pulsed Drain Current B  
Avalanche Current B  
A
IDSM  
IDM  
7.2  
5.9  
40  
40  
IAR  
16  
12  
A
Repetitive avalanche energy L=0.3mH B  
EAR  
38  
22  
mJ  
TA=25°C  
2.0  
2.0  
PDSM  
W
°C  
TA=70°C  
Power Dissipation  
1.3  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
-55 to 150  
Thermal Characteristics FET1  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
RθJL  
Steady-State  
Steady-State  
74  
32  
Maximum Junction-to-Lead C  
40  
Thermal Characteristics FET2  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
RθJL  
Steady-State  
Steady-State  
74  
32  
Maximum Junction-to-Lead C  
40  
1/9  
www.freescale.net.cn  

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