Datasheet > AO4932

AO4932

更新时间： 2024-11-17 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关光电二极管
页数	文件大小	规格书
9页	465K
描述
Asymmetric Dual N-Channel MOSFET

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AO4932 数据手册

AO4932

Asymmetric Dual N-Channel MOSFET

General Description

The AO4932 uses advanced trench technology to provide

excellent R

_DS(ON)and low gate charge. The two MOSFETs

make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A

the synchronous MOSFET to boost efficiency further.

monolithically integrated Schottky diode in parallel with

Features

FET1(N-Channel)

FET2(N-Channel)

V_DS= 30V

30V

I_D= 11A (V_GS=10V)

R_DS(ON)

8A (V_GS=10V)

R_DS(ON)

< 12.5mꢀ (V_GS=10V)

< 15mꢀ (V_GS=4.5V)

< 19mꢀ (VGS=10V)

< 23mꢀ (VGS=4.5V)

SRFET^TM

Soft Recovery MOSFET:

Top View

Integrated Schottky Diode

S2/D1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max FE1

Max FET2

Units

Drain-Source Voltage

V_DS

±12

±20

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

6.5

I_DM

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

P_D

°C

Power Dissipation ^B

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

1/9

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与AO4932相关器件

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AO4932 (KO4932)	KEXIN	获取价格	Dual N-Channel MOSFET
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AO4938 (KO4938)	KEXIN	获取价格	Dual N-Channel MOSFET
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