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AO4936 PDF预览

AO4936

更新时间: 2024-11-18 12:52:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
5页 413K
描述
N-Channel 30-V (D-S) MOSFET High performance trench technology

AO4936 数据手册

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Freescale  
AO4936/MC4936  
N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
VDS (V)  
rDS(on) m()  
ID (A)  
6.5  
32 @ VGS = 4.5V  
40 @ VGS = 2.5V  
30  
5.8  
1
2
3
4
8
7
Low rDS(on) provides higher efficiency and  
extends battery life  
6
5
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±12  
TA=25oC  
TA=70oC  
6.5  
±5.3  
±50  
2.3  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
W
oC  
TA=25oC  
TA=70oC  
2.0  
Power Dissipationa  
PD  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
oC/W  
t <= 10 sec  
Steady-State  
62.5  
Maximum Junction-to-Ambienta  
RθJA  
oC/W  
110  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
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