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AO4938 PDF预览

AO4938

更新时间: 2024-09-15 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
8页 490K
描述
30V Dual N-Channel MOSFET

AO4938 数据手册

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AO4938  
30V Dual N-Channel MOSFET  
General Description  
excellent RDS(ON)and low gate charge. The two MOSFETs  
rectifier combination for use in DC-DC converters. A  
The AO4938 uses advanced trench technology to provide  
make a compact and efficient switch and synchronous  
monolithically integrated Schottky diode in parallel withthe synchronous MOSFET to boost efficiency further.  
Features  
FET1(N-Channel)  
FET2(N-Channel)  
VDS= 30V  
30V  
ID= 8.8A (VGS=10V)  
RDS(ON)  
8A (VGS=10V)  
RDS(ON)  
< 16m(VGS=10V)  
< 22m(VGS=4.5V)  
< 19m(VGS=10V)  
< 28m(VGS=4.5V)  
SRFETTM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
D1  
D2  
Top View  
D2  
D2  
G1  
S1  
G2  
S2/D1  
S2/D1  
S2/D1  
G2  
G1  
S2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max FET1  
Max FET2  
Units  
Drain-Source Voltage  
VDS  
30  
±20  
8.8  
7.1  
60  
30  
±20  
8
V
Gate-Source Voltage  
VGS  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
6.5  
40  
13  
25  
2
IDM  
IAS, IAR  
EAS, EAR  
21  
A
Avalanche energy L=0.3mH C  
66  
mJ  
TA=25°C  
2
PD  
W
°C  
Power Dissipation B  
TA=70°C  
1.3  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
1/8  
www.freescale.net.cn  

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