Datasheet > AO4928

AO4928

更新时间： 2024-11-17 04:06:19

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	156K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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AO4928 数据手册

AO4928

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

FET1

The AO4928 uses advanced trench technology to

provide excellent R _DS(ON)and low gate charge. The two

MOSFETs make a compact and efficient switch and

synchronous rectifier combination for use in DC-DC

converters. A monolithically integrated Schottky diode in

parallel with the synchronous MOSFET to boost

efficiency further. Standard Product AO4928 is Pb-free

(meets ROHS & Sony 259 specifications). AO4928L is

a Green Product ordering option. AO4928L and AO4928

are electrically identical.

FET2

V_DS(V) = 30V

I_D=7.3A

V_DS(V) = 30V

I_D= 9A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 16mΩ

<24mΩ

<29mΩ

R_DS(ON)< 19.5mΩ

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

SOIC-8

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max FET1

Max FET2

Units

V_DS

Drain-Source Voltage

±12

7.3

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^C

±12

9.0

T_A=25°C

T_A=70°C

I_DSM

I_DM

7.2

5.9

I_AR

Repetitive avalanche energy L=0.3mH ^C

E_AR

T_A=25°C

2.0

P_DSM

Power Dissipation

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics FET1

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

R_θJA

R_θJL

Steady-State

Thermal Characteristics FET2

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

R_θJL

Steady-State

Maximum Junction-to-Lead ^C

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

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