Datasheet > AO4926

AO4926

更新时间： 2024-10-30 04:06:19

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	242K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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AO4926 数据手册

AO4926

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

SRFET

Features

General Description

FET1

FET2

V_DS(V) = 30V

I_D=7.3A (V_GS= 10V)

The AO4926 uses advanced trench technology to provide

excellent R _DS(ON)and low gate charge. The two

MOSFETs make a compact and efficient switch and

synchronous rectifier combination for use in DC-DC

converters. A monolithically integrated Schottky diode in

parallel with the synchronous MOSFET to boost efficiency

further. Standard Product AO4926 is Pb-free (meets

ROHS & Sony 259 specifications).

_DS(V) = 30V

I_D= 9.5A

_DS(ON)< 13.5mΩ <24mΩ

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 16mΩ

<29mΩ

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

SOIC-8

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max FET1 Max FET2

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

Avalanche Current ^B

±12

9.5

7.8

±12

7.3

5.9

V_GS

T_A=25°C

T_A=70°C

I_DSM

I_DM

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

T_A=25°C

2.0

1.3

2.0

1.3

P_DSM

Power Dissipation

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150 -55 to 150

°C

Thermal Characteristics FET1

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Thermal Characteristics FET2

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7 8

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