Datasheet > AO4918AL

AO4918AL

更新时间： 2024-10-30 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	150K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4918AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO4918AL 数据手册

AO4918A

Asymmetric Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO4918A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in DC-

DC converters. A Schottky diode is co-packaged in

parallel with the synchronous MOSFET to boost

efficiency further.AO4918A is Pb-free (meets ROHS

& Sony 259 specifications). AO4918AL is a Green

Product ordering option. AO4918A and AO4918AL

are electrically identical.

V_DS(V) = 30V

I_D= 9.3A

I_D=8.5A

_DS(ON)< 14.5mΩ

<18mΩ

<27mΩ

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 16mΩ

SCHOTTKY

V_DS(V) = 30V, I_F= 3A, V_F<0.5V@1A

D1/S2/K

S1/A

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max Q1

Max Q2

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±12

9.3

7.4

±20

8.5

T_A=25°C

T_A=70°C

I_D

6.7

Pulsed Drain Current^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Parameter

Symbol

Maximum Schottky

Units

V_DS

Reverse Voltage

Continuous Forward

Current ^A

Pulsed Diode Forward Current^B

T_A=25°C

T_A=70°C

I_F

2.2

I_FM

T_A=25°C

P_D

Power Dissipation^A

T_A=70°C

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

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