Datasheet > AO4918L

AO4918L

更新时间： 2024-11-17 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	150K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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AO4918L 数据手册

AO4918

Asymmetric Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO4918 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. The two

MOSFETs make a compact and efficient switch and

synchronous rectifier combination for use in DC-DC

converters. A Schottky diode is co-packaged in parallel

with the synchronous MOSFET to boost efficiency further

Standard Product AO4918 is Pb-free (meets ROHS &

Sony 259 specifications). AO4918L is a Green Product

ordering option. AO4918 and AO4918L are electrically

identical.

V_DS(V) = 30V

I_D= 9.3A (V_GS= 10V) I_D=8.3A (VGS = 10V

R_DS(ON)< 14.5mΩ

R_DS(ON)< 16mΩ

<18mΩ

<27mΩ

(V_GS= 10V)

(V_GS= 4.5V)

SCHOTTKY

_DS(V) = 30V, I_F= 3A, V_F<0.5V@1A

D1/S2/K

S1/A

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

V_DS

Max Q1

Max Q2

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±12

9.3

±20

8.3

T_A=25°C

T_A=70°C

I_D

7.4

6.7

Pulsed Drain Current^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Parameter

Symbol

Maximum Schottky

Units

V_DS

Reverse Voltage

Continuous Forward

Current ^A

Pulsed Diode Forward Current^B

T_A=25°C

T_A=70°C

2.2

I_F

I_FM

T_A=25°C

Power Dissipation^A

T_A=70°C

P_D

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

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