Datasheet > AO4922_11

AO4922_11

更新时间： 2024-11-17 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
8页	244K
描述
Asymmetric Dual N-Channel MOSFET

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AO4922_11 数据手册

AO4922

Asymmetric Dual N-Channel MOSFET

SRFET

General Description

Product Summary

The AO4922 uses advanced trench technology to

provide excellent R _DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in DC-

DC converters. A monolithically integrated Schottky

diode in parallel with the synchronous MOSFET to

boost efficiency further.

FET1

V_DS(V) = 30V

I_D= 9A

FET2

V_DS(V) = 30V

I_D=7.3A

(V_GS= 10V)

R_DS(ON)< 15.8mΩ <24mΩ

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 18.5mΩ

<29mΩ

100% UIS Tested

100% Rg Tested

SOIC-8

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max FET1 Max FET2

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±12

9.0

7.2

±12

7.3

5.9

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^B

I_DSM

I_DM

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

T_A=25°C

Power Dissipation^A

T_A=70°C

2.0

1.3

2.0

1.3

P_DSM

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150 -55 to 150

Thermal Characteristics FET1

Parameter

Symbol

Typ

Max

62.5

Units

Maximum Junction-to-Ambient ^A

t ≤ 10s

°C/W

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Thermal Characteristics FET2

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

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