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AO4922 PDF预览

AO4922

更新时间: 2024-11-17 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 161K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4922 数据手册

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AO4922  
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor  
TM  
SRFET  
Features  
General Description  
FET1  
VDS (V) = 30V  
ID = 9A  
FET2  
VDS(V) = 30V  
The AO4922 uses advanced trench technology to  
provide excellent R DS(ON) and low gate charge. The  
two MOSFETs make a compact and efficient switch  
and synchronous rectifier combination for use in DC-  
DC converters. A monolithically integrated Schottky  
diode in parallel with the synchronous MOSFET to  
boost efficiency further. Standard Product AO4922 is  
Pb-free (meets ROHS & Sony 259 specifications).  
AO4922L is a Green Product ordering option.  
ID=7.3A  
(VGS = 10V)  
R
DS(ON) < 15.8m<24mΩ  
DS(ON) < 18.5m<29mΩ  
(VGS = 10V)  
(VGS = 4.5V)  
R
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
AO4922L and AO4922 are electrically identical.  
SOIC-8  
SRFETTM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max FET1 Max FET2  
Units  
VDS  
Drain-Source Voltage  
30  
±12  
9.0  
7.2  
40  
30  
±12  
7.3  
5.9  
40  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain Current B  
Avalanche Current B  
V
TA=25°C  
TA=70°C  
A
IDSM  
IDM  
IAR  
22  
12  
A
Repetitive avalanche energy L=0.3mH B  
EAR  
73  
22  
mJ  
TA=25°C  
Power DissipationA  
TA=70°C  
2.0  
1.3  
2.0  
1.3  
PDSM  
W
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150 -55 to 150  
°C  
Thermal Characteristics FET1  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
Thermal Characteristics FET2  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
74  
Maximum Junction-to-Lead C  
RθJL  
32  
40  
Alpha & Omega Semiconductor, Ltd.  

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