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AO4916A PDF预览

AO4916A

更新时间: 2024-11-19 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
8页 188K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4916A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

AO4916A 数据手册

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AO4916A  
Dual N-Channel Enhancement Mode Field Effect Transistor with  
Schottky Diode  
General Description  
Features  
The AO4916A uses advanced trench technology to  
provide excellent R DS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters. A Schottky diode is co-packaged in parallel  
with the synchronous MOSFET to boost efficiency further  
Standard product AO4916A is Pb-free (meets ROHS &  
Sony 259 specifications). AO4916AL is a Green Product  
ordering option. AO4916A and AO4916AL are  
electrically identical.  
Q1  
VDS (V) = 30V  
Q2  
VDS(V) = 30V  
ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V)  
RDS(ON) < 17m  
DS(ON) < 27mΩ  
<17mΩ  
<27mΩ  
(VGS = 10V)  
(VGS = 4.5V)  
R
SCHOTTKY  
VDS (V) = 30V, IF = 3A, VF<0.5V@1A  
D1  
D2  
Q2  
Q1  
1
2
3
4
8
7
6
5
D2  
D2  
G1  
G2  
K
A
D1/S2/K  
D1/S2/K  
D1/S2/K  
S1/A  
G1  
SOIC8  
G2  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Max Q1  
Symbol  
Max Q2  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
±20  
30  
V
VGS  
±20  
8.5  
V
A
TA=25°C  
TA=70°C  
8.5  
ID  
6.6  
6.6  
Pulsed Drain CurrentB  
IDM  
30  
30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Parameter  
Maximum Schottky  
Units  
Symbol  
VDS  
Reverse Voltage  
30  
3
V
TA=25°C  
TA=70°C  
Continuous Forward  
Current A  
Pulsed Diode Forward CurrentB  
IF  
2.2  
A
IFM  
20  
2
TA=25°C  
PD  
W
Power DissipationA  
TA=70°C  
1.28  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Alpha & Omega Semiconductor, Ltd.  

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