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AO4918 PDF预览

AO4918

更新时间: 2024-11-17 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 150K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4918 数据手册

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AO4918  
Asymmetric Dual N-Channel Enhancement Mode Field Effect  
Transistor  
General Description  
Features  
Q1  
Q2  
The AO4918 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters. A Schottky diode is co-packaged in parallel  
with the synchronous MOSFET to boost efficiency further  
Standard Product AO4918 is Pb-free (meets ROHS &  
Sony 259 specifications). AO4918L is a Green Product  
ordering option. AO4918 and AO4918L are electrically  
identical.  
VDS (V) = 30V  
VDS(V) = 30V  
ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V  
RDS(ON) < 14.5m  
RDS(ON) < 16mΩ  
<18mΩ  
<27mΩ  
(VGS = 10V)  
(VGS = 4.5V)  
SCHOTTKY  
V
DS (V) = 30V, IF = 3A, VF<0.5V@1A  
D1  
S1  
D2  
K
A
1
2
3
4
8
7
6
5
D2  
D2  
G1  
G2  
Q2  
Q1  
D1/S2/K  
D1/S2/K  
D1/S2/K  
S1/A  
G1  
G2  
S2  
SOIC-8  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Max Q1  
30  
Max Q2  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
V
V
VGS  
±12  
9.3  
±20  
8.3  
TA=25°C  
TA=70°C  
ID  
7.4  
6.7  
A
Pulsed Drain CurrentB  
IDM  
40  
2
40  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.28  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Parameter  
Symbol  
Maximum Schottky  
Units  
VDS  
Reverse Voltage  
30  
V
Continuous Forward  
Current A  
Pulsed Diode Forward CurrentB  
TA=25°C  
TA=70°C  
3
2.2  
IF  
A
IFM  
20  
TA=25°C  
Power DissipationA  
TA=70°C  
2
PD  
W
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Alpha & Omega Semiconductor, Ltd.  

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