Datasheet > AO4912 (KO4912)

AO4912 (KO4912)

更新时间： 2024-10-31 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
7页	2360K
描述
Dual N-Channel MOSFET

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中文翻译

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数据手册

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AO4912 (KO4912) 数据手册

SMD Type

MOSFET

Dual N-Channel MOSFET

AO4912 (KO4912)

SOP-8

Unit:mm

■ Features

N-Channel 1

● V^{DS (V)}= 30V

● ID = 8.5 A (V^GS= 10V)

0.15

1.50

● R^DS(ON)＜ 17mΩ (VGS = 10V)

● R^DS(ON)＜ 25mΩ (V^GS= 4.5V)

5 D1/S2/K

6 D1/S2/K

7 D1/S2/K

8 G2

1 D2

2 D2

3 G1

4 S1/A

● V^{DS (V)}= 30V, I

N-Channel 2

F = 3A, VF<0.5V@1A

● V^{DS (V)}= 30V

● ID = 7 A (VGS = 10V)

● R^DS(ON)＜ 26mΩ (VGS = 10V)

● R^DS(ON)＜ 31mΩ (VGS = 4.5V)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

N-Channel 1

Schottky

N-Channel 2 Unit

Gate-Source Voltage

±20

±12

Schottky Reverse Voltage

8.5

6.8

=25℃

=70℃

Continuous Drain Current

Pulsed Drain Current

6.4

=25℃

=70℃

Continuous Forward Current

2.2

Pulsed Diode Forward Current

Avalanche Current

Repetitive Avalanche Energy

L=0.3mH

=25℃

=70℃

Power Dissipation

1.28

62.5

110

t ≤ 10s

Thermal Resistance.Junction- to-Ambient

thJA

thJL

Steady-State

℃/W

Thermal Resistance.Junction- to-Lead

Junction Temperature

150

℃

Storage Temperature Range

-55 to 150

stg

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