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AO4914 PDF预览

AO4914

更新时间: 2024-10-29 21:54:15
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
8页 148K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4914 数据手册

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Rev 6: May 2005  
AO4914  
Dual N-Channel Enhancement Mode Field Effect Transistor with  
Schottky Diode  
General Description  
Features  
The AO4914 uses advanced trench technology to provide  
excellent R DS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters. A Schottky diode is co-packaged in parallel  
with the synchronous MOSFET to boost efficiency further  
AO4914 is Pb-free (meets ROHS & Sony 259  
Q1  
VDS (V) = 30V  
Q2  
VDS(V) = 30V  
ID = 8.5A  
ID = 8.5A  
R
R
DS(ON) < 18m  
DS(ON) < 28mΩ  
<18mΩ  
<28mΩ  
(VGS = 10V)  
(VGS = 4.5V)  
SCHOTTKY  
VDS (V) = 30V, IF = 3A, VF<0.5V@1A  
specifications). AO4914L is a Green Product ordering  
option. AO4914 and AO4914L are electrically identical.  
D2  
D1  
Q2  
Q1  
1
2
3
4
8
7
6
5
S2/A  
G2  
S1  
D2/K  
D2/K  
D1  
K
A
G1  
D1  
G2  
SOIC-8  
G1  
S2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Max Q1  
Symbol  
Max Q2  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
±20  
30  
V
VGS  
±20  
8.5  
V
A
TA=25°C  
TA=70°C  
8.5  
ID  
6.6  
6.6  
Pulsed Drain CurrentB  
IDM  
30  
30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Parameter  
Maximum Schottky  
Units  
Symbol  
VDS  
Reverse Voltage  
30  
3
V
TA=25°C  
TA=70°C  
Continuous Forward  
Current A  
Pulsed Diode Forward CurrentB  
IF  
2.2  
A
IFM  
20  
2
TA=25°C  
PD  
W
Power DissipationA  
TA=70°C  
1.28  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Alpha & Omega Semiconductor, Ltd.  

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