AO4914L

更新时间： 2024-11-17 13:02:11

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
8页	148K
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数据手册

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AO4914L 数据手册

Rev 6: May 2005

AO4914

Dual N-Channel Enhancement Mode Field Effect Transistor with

Schottky Diode

General Description

Features

The AO4914 uses advanced trench technology to provide

excellent R DS(ON) and low gate charge. The two

MOSFETs make a compact and efficient switch and

synchronous rectifier combination for use in DC-DC

converters. A Schottky diode is co-packaged in parallel

with the synchronous MOSFET to boost efficiency further

AO4914 is Pb-free (meets ROHS & Sony 259

V_DS(V) = 30V

I_D= 8.5A

_DS(ON)< 18mΩ

_DS(ON)< 28mΩ

<18mΩ

<28mΩ

(V_GS= 10V)

(V_GS= 4.5V)

SCHOTTKY

V_DS(V) = 30V, I_F= 3A, V_F<0.5V@1A

specifications). AO4914L is a Green Product ordering

option. AO4914 and AO4914L are electrically identical.

S2/A

D2/K

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Max Q1

Symbol

Max Q2

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±20

V_GS

±20

8.5

T_A=25°C

T_A=70°C

8.5

I_D

6.6

Pulsed Drain Current^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Parameter

Maximum Schottky

Units

Symbol

V_DS

Reverse Voltage

T_A=25°C

T_A=70°C

Continuous Forward

Current ^A

Pulsed Diode Forward Current^B

I_F

2.2

I_FM

T_A=25°C

P_D

Power Dissipation^A

T_A=70°C

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

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