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AO4912L PDF预览

AO4912L

更新时间: 2024-11-17 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 151K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:NBase Number Matches:1

AO4912L 数据手册

 浏览型号AO4912L的Datasheet PDF文件第2页浏览型号AO4912L的Datasheet PDF文件第3页浏览型号AO4912L的Datasheet PDF文件第4页浏览型号AO4912L的Datasheet PDF文件第5页浏览型号AO4912L的Datasheet PDF文件第6页浏览型号AO4912L的Datasheet PDF文件第7页 
AO4912  
Asymmetric Dual N-Channel Enhancement Mode Field Effect  
Transistor  
General Description  
Features  
The AO4912 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters. A Schottky diode is co-packaged in parallel  
with the synchronous MOSFET to boost efficiency further  
Standard Product AO4912 is Pb-free (meets ROHS &  
Sony 259 specifications). AO4912L is a Green Product  
ordering option. AO4912 and AO4912L are electrically  
identical.  
Q1  
VDS (V) = 30V  
Q2  
VDS(V) = 30V  
ID = 8.5A  
ID=7A  
(VGS = 10V)  
R
R
DS(ON) < 17m  
DS(ON) < 25mΩ  
<26mΩ  
<31mΩ  
(VGS = 10V)  
(VGS = 4.5V)  
SCHOTTKY  
VDS (V) = 30V, IF = 3A, VF<0.5V@1A  
D1  
D2  
K
A
1
2
3
4
8
7
6
5
D2  
D2  
G1  
G2  
Q2  
Q1  
D1/S2/K  
D1/S2/K  
D1/S2/K  
S1/A  
G1  
G2  
S1  
S2  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Max Q1  
30  
Symbol  
VDS  
Max Q2  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
VGS  
±20  
8.5  
±12  
V
A
TA=25°C  
TA=70°C  
7
6.4  
ID  
6.8  
Pulsed Drain CurrentB  
IDM  
40  
30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Parameter  
Maximum Schottky  
Units  
Symbol  
VDS  
Reverse Voltage  
30  
3
V
TA=25°C  
TA=70°C  
Continuous Forward  
Current A  
Pulsed Diode Forward CurrentB  
IF  
2.2  
A
IFM  
20  
2
TA=25°C  
PD  
W
Power DissipationA  
TA=70°C  
1.28  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Alpha & Omega Semiconductor, Ltd.  

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