Datasheet > AO3413

AO3413

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	635K
描述
SOT-23

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中文翻译

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数据手册

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AO3413 数据手册

AO3413

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-20V,R_DS(ON)≤80mΩ@V_GS=-4.5V,I_D=-3A

 Low on-resistance

 For PWM and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

VDS

Value

-20

Unit

Gate-source voltage

VGS

±8

-3

-2.4

-15

1.4

0.9

T_A=25°C

T_A=70°C

Continuous drain current

Pulsed drain current

IDM

T_A=25°C

T_A=70°C

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

RθJA

TSTG

125

150

-55~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

Symbol Min Typ

Max Unit

Conditions

VGS=0V, ID=-250μA

V(BR)DSS*

-20

I_DSS

I_GSS

-1

μA V_DS=-20V,

V^GS=0V

±100 nA

V_DS=0V,

VGS=±8V

VDS=VGS, ID=-250μA

VGS=-10V, VDS=-5V

V_GS(th)

ID(ON)*

-0.4 -0.65

-15

-1

On state drain current

100

130

V =-4.5V, I =-3A

mΩ

Drain-source on-resistance

R_DS(ON)

V =-2.5V, I =-2.6A

V =-1.8V, I =-1A

g_FS

R_g

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V =-5V, I =-3A

745

V_DS=0V,

VGS=0V, f=1MHz

C_iss

C_oss

C_rss

t_d(on)

t_r

560

7.2

V_{DS=-10V, VGS=0V, f=1MHz}

VGS=-4.5V,VDS=-10V,

RGEN=6Ω,RL=3.3Ω

t_d(off)

t_f

Q_g

8.5

1.2

2.1

-0.7

Q_gs

Q_gd

V_SD

I_S

nC VDS=-10V,VGS=-4.5V,ID=-3A

-1

-1.4

IS=-1A, VGS=0V

t_rr

Qrr

IF=-3A,dI/dt=100A/μs

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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