Datasheet > AO3403

AO3403

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	656K
描述
SOT-23

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获取价格

数据手册

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AO3403 数据手册

AO3403

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-30V,R_DS(ON)≤60mΩ@V_GS=-10V,I_D=-4A

 Low on-resistance

 For PWM and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

VDS

Value

-30

Unit

Gate-source voltage

VGS

±20

-4

-2.6

T_A=25°C

T_A=70°C

Continuous drain current

Pulsed drain current

IDM

-13

1.4

0.9

T_A=25°C

T_A=70°C

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

RθJA

TSTG

125

150

-55~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

Symbol Min Typ

Max Unit

Conditions

VGS=0V, ID=-250μA

V_DS=-24V,

VGS=0V

V(BR)DSS*

-30

I_DSS

I_GSS

-100

±100 nA

V_DS=0V,

VGS=±16V

V_GS(th)

ID(ON)*

-1.0

-13

-1.6 -2.5

V =V , I =-250μA

On state drain current

V =-10V, V =-5V

V =-10V, I =-4A

mΩ

Drain-source on-resistance

R_{DS(ON )}

VGS=-4.5V, ID=-3A

mΩ

Forward transconductance

Gate resistance

g_FS

R_g

VDS=-5V, ID=-2.6A

V_DS=0V,

VGS=0V, f=1MHz

C_iss

C_oss

C_rss

t_d(on)

t_r

260

3.5

315

Input capacitance

V_{DS=-15V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

VGS=-10V,VDS=-15V,

RGEN=3Ω,RL=5.76Ω

t_d(off)

t_f

2.8

5.9

0.7

3.5

7.2

nC VDS=-15V,VGS=-4.5V,ID=-2.6A

nC VDS=-15V,VGS=-10V,ID=-2.6A

Total gate charge

Q_g

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

Q_gs

Q_gd

V_SD

I_S

-0.8

-1.2

-2

IS=-2A, VGS=0V

T_C= 25°C

t_rr

Qrr

11.5

4.5

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IF=-4.0A,dI/dt=100A/μs

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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