Datasheet > AO3406

AO3406

更新时间： 2024-11-19 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	696K
描述
SOT-23

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中文翻译

获取价格

数据手册

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AO3406 数据手册

AO3406

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=30V,R_DS(ON)≤50mΩ@V_GS=10V,I_D=3.6A

 For PWM application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

±20

3.6

2.9

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

TA=25°C

P_D

1.40

0.9

125

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

150

-55 ~+150

Storage temperature

TSTG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS*

I_DSS

I_GSS

uA V_DS=30V,

V =0V

±100 nA

V_DS=0V,

V =±20V

V_GS(th)

1.5

2.5

mΩ

V =V , I =250μA

VGS=10V, ID=3.6A

VGS=10V, ID=3.6A, TJ=125°C

Drain-source on-resistance)

R_DS(ON)

V =4.5V, I =2.8A

I_D(ON)

g_FS

R_g

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

V_DS=5V, VGS=10V

VDS=5V, ID=3.6A

VGS=0V, VDS=0V, f=1MHz

On-State Drain Current

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

3.5

170

1.7

5.3

210

V_{DS=15V, VGS=0V, f=1MHz}

4.5

1.5

18.5

15.5

4.05

0.55

nS VDS=15V, VGS=10V,

RGEN=3Ω, RL=2.2Ω

VDS=15V,VGS=10V,ID=3.6A

0.79

1.5

IS=1A, VGS=0V

t_rr

Q_rr

7.5

2.5

nS IF=3.6A, dI/dt=100A/us

nC IF=3.6A, dI/dt=100A/us

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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