Datasheet > AO3406_11

AO3406_11

更新时间： 2024-10-30 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	534K
描述
30V N-Channel MOSFET

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AO3406_11 数据手册

AO3406

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO3406 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. This device is

suitable for use as a load switch or in PWM applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

3.6A

< 50mΩ

< 70mΩ

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

3.6

Continuous Drain

Current

I_D

2.9

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

1.4

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

125

R_θJA

Steady-State

100

R_θJL

Rev 7: Jan. 2011

www.aosmd.com

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