AO3409L

更新时间： 2024-11-20 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO3409L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Is Samacsys：	N	Base Number Matches：	1

AO3409L 数据手册

AO3409

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3409 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO3409 is Pb-free

(meets ROHS & Sony 259 specifications). AO3409L

is a Green Product ordering option. AO3409 and

AO3409L are electrically identical.

V_DS(V) = -30V

I_D= -2.6 A (V_GS= -10V)

_DS(ON)< 130mΩ (V_GS= -10V)

_DS(ON)< 200mΩ (V_GS= -4.5V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

-2.6

T_A=25°C

T_A=70°C

I_D

-2.2

Pulsed Drain Current ^B

I_DM

-20

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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