Datasheet > AO3407_11

AO3407_11

更新时间： 2024-01-11 05:24:02

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	453K
描述
30V P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO3407_11 数据手册

AO3407

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO3407 uses advanced trench technology to provide

excellent R_DS(ON)with low gate charge. This device is

suitable for use as a load switch or in PWM applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

-4.1A

< 52mΩ

< 87mΩ

R_DS(ON)(at V_GS= 4.5V)

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-4.1

Continuous Drain

Current

I_D

-3.5

Pulsed Drain Current ^C

I_DM

P_D

-25

1.4

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Rev 5: Nov 2011

www.aosmd.com

Page 1 of 5

12 3 4 5

中文翻译

下载PDF

与AO3407_11相关器件

型号	品牌	获取价格	描述	数据表
AO3407A	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO3407A	UMW	获取价格	漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-4.2A;栅极-源
AO3407A_11	AOS	获取价格	30V P-Channel MOSFET
AO3407AL	AOS	获取价格	Transistor
AO3407-HF	KEXIN	获取价格	P-Channel MOSFET
AO3409	KEXIN	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO3409	FREESCALE	获取价格	P - Channel Logic Level MOSFET Low Gate Charge
AO3409	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO3409	HC	获取价格	SOT-23-3
AO3409_11	AOS	获取价格	30V P-Channel MOSFET