Datasheet > AO3407

AO3407

更新时间： 2024-11-19 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	671K
描述
SOT-23

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中文翻译

获取价格

数据手册

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AO3407 数据手册

AO3407

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-30V,R_DS(ON)≤52mΩ@V_GS=-10V,I_D=-4.1A

 Low on-resistance

 For PWM and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

VDS

Value

-30

Unit

Gate-source voltage

VGS

±20

-4.1

-3.5

T_A=25°C

T_A=70°C

Continuous drain current

Pulsed drain current

IDM

-25

1.4

0.9

T_A=25°C

T_A=70°C

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

RθJA

TSTG

125

150

-55~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

Symbol Min Typ

Max Unit

Conditions

VGS=0V, ID=-250μA

V(BR)DSS*

-30

I_DSS

I_GSS

-1

μA V_DS=-30V,

V^GS=0V

±100 nA

V_DS=0V,

VGS=±20V

VDS=VGS, ID=-250μA

VGS=-10V, VDS=-5V

V_GS(th)

-1.4 -1.9

-2.4

ID(ON)*

-25

On state drain current

V =-10V, I =-4.1A

mΩ

Drain-source on-resistance

R_DS(ON)

V =-10V, I =-4.1A, T_J=125 C

V =-4.5V, I =-3A

g_FS

R_g

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V =-5V, I =-4.1A

3.5

7.5

520

100

11.5

V_DS=0V,

VGS=0V, f=1MHz

C_iss

C_oss

C_rss

t_d(on)

t_r

V_{DS=-15V, VGS=0V, f=1MHz}

7.5

5.5

VGS=-10V,VDS=-15V,

RGEN=3Ω,RL=3.65Ω

t_d(off)

t_f

4.6

9.2

1.6

2.2

-0.7

nC VDS=-15V,VGS=-4.5V,ID=-4.1A

nC VDS=-15V,VGS=-10V,ID=-4.1A

Total gate charge

Q_g

Q_gs

Q_gd

V_SD

I_S

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

-1

-2

IS=-1A, VGS=0V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_rr

Qrr

5.3

IF=-4.1A,dI/dt=100A/μs

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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