Datasheet > AO3409

AO3409

更新时间： 2024-11-21 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	513K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO3409 数据手册

AO3409

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-30V,R_DS(ON)≤110mΩ@V_GS=-10V,I_D=-2.6A

 Low on-resistance

 For PWM and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

VDS

Value

-30

Unit

Gate-source voltage

VGS

±20

-2.6

-2.2

T_A=25°C

T_A=70°C

Continuous drain current

Pulsed drain current

IDM

-20

1.4

T_A=25°C

T_A=70°C

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

RθJA

TSTG

125

150

-55~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

Symbol Min Typ

Max Unit

Conditions

VGS=0V, ID=-250μA

V(BR)DSS*

-30

I_DSS

I_GSS

-1

μA V_DS=-30V,

V^GS=0V

±100 nA

V_DS=0V,

VGS=±20V

VDS=VGS, ID=-250μA

VGS=-10V, VDS=-5V

V_GS(th)

-1.4 -1.9

-2.4

ID(ON)*

-20

On state drain current

110

140

180

V =-10V, I =-2.6A

mΩ

Drain-source on-resistance

R_DS(ON)

100

125

7.2

197

V =-10V, I =-2.6A,T_J=125 C

V =-4.5V, I =-2A

g_FS

R_g

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V =-5V, I =-2.6A

3.5

240

V_DS=0V,

VGS=0V, f=1MHz

C_iss

C_oss

C_rss

t_d(on)

t_r

V_{DS=-15V, VGS=0V, f=1MHz}

7.5

4.1

11.8

3.8

2.2

4.3

0.7

1.1

-0.8

VGS=-10V,VDS=-15V,

RGEN=3Ω,RL=5.8Ω

t_d(off)

t_f

nC VDS=-15V,VGS=-4.5V,ID=-2.6A

Total gate charge

Q_g

5.2

Q_gs

Q_gd

V_SD

I_S

nC VDS=-15V,VGS=-10V,ID=-2.6A

Gate-source charge

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

-1

-1.5

IS=-1A, VGS=0V

t_rr

Qrr

11.3

4.4

IF=-2.6A,dI/dt=100A/μs

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

1 / 6

E-mail:hkt@heketai.com

12 3 4 5 6

中文翻译

下载PDF

与AO3409相关器件

型号	品牌	获取价格	描述	数据表
AO3409 (KO3409)	KEXIN	获取价格	P-Channel MOSFET
AO3409_11	AOS	获取价格	30V P-Channel MOSFET
AO3409A	UMW	获取价格	漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-2.6A;栅极-源
AO3409-HF	KEXIN	获取价格	P-Channel Enhancement MOSFET
AO3409-HF-3	KEXIN	获取价格	P-Channel Enhancement MOSFET
AO3409L	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO3410	AOS	获取价格	PACKAGE MARKING DESCRIPTION
AO3410	HOTTECH	获取价格	SOT-23
AO3410 (KO3410)	KEXIN	获取价格	N-Channel MOSFET
AO3410L	AOS	获取价格	PACKAGE MARKING DESCRIPTION