Datasheet > AO3409-HF

AO3409-HF

更新时间： 2024-11-19 01:21:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1394K
描述
P-Channel Enhancement MOSFET

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中文翻译

获取价格

数据手册

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AO3409-HF 数据手册

SMD Type

MOSFET

P-Channel Enhancement MOSFET

AO3409-HF ^(KO3409-HF)

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

+0.1

-0.1

0.4

Features

VDS (V) = -30V

ID = -2.6 A (VGS = -10V)

RDS(ON) < 130m (VGS = -10V)

RDS(ON) < 200m (VGS = -4.5V)

+0.02

-0.02

+0.1

0.15

0.95

-0.1

+0.1

-0.2

1.9

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1. Gate

2. Source

3. Drain

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DS

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

-2.6

-2.2

-20

1.4

Continuous Drain Current

T^A=25

T^A=70

Pulsed Drain Current

Power Dissipation

I^DM

T^A=25

T^A=70

Themal Resistance. Junction-to-Ambient

Themal Resistance. Junction-to-Case

Junction and Storage Temperature Range

R^thJA

R^thJC

125

T^J, TSTG

-55 to 150

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与AO3409-HF相关器件

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