Datasheet > AO3407A_11

AO3407A_11

更新时间： 2024-11-18 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	489K
描述
30V P-Channel MOSFET

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AO3407A_11 数据手册

AO3407A

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO3407A uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

-4.3A

< 48mΩ

< 78mΩ

R_DS(ON)(at V_GS=-4.5V)

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-4.3

Continuous Drain

Current

I_D

-3.5

Pulsed Drain Current ^C

I_DM

P_D

-25

1.4

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Rev 5: Nov 2011

www.aosmd.com

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