Datasheet > AO3404A

AO3404A

更新时间： 2024-11-20 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
4页	206K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO3404A 数据手册

AO3404A

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO3404A uses advanced trench technology to

device is suitable for use as a load switch or in PWM

allow a Kelvin connection to the source, which may

provide excellent R_DS(ON)and low gate charge. This

applications. The source leads are separated to

be used to bypass the source inductance.

Features

V_DS(V) = 30V

I_D= 5.8A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 25mΩ

R_DS(ON)< 35mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

5.8

Continuous Drain

Current ^A,F

Pulsed Drain Current ^B

I_D

4.9

I_DM

T_A=25°C

T_A=70°C

1.4

P_D

°C

Power Dissipation

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

125

R_θJL

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