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AO3404L PDF预览

AO3404L

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 109K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3404L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.81
Base Number Matches:1

AO3404L 数据手册

 浏览型号AO3404L的Datasheet PDF文件第2页浏览型号AO3404L的Datasheet PDF文件第3页浏览型号AO3404L的Datasheet PDF文件第4页 
AO3404  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3404 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device may be used as a load switch or in PWM  
applications. Standard Product AO3404 is Pb-free  
(meets ROHS & Sony 259 specifications). AO3404L  
is a Green Product ordering option. AO3404 and  
AO3404L are electrically identical.  
VDS (V) = 30V  
ID = 5.8A (VGS = 10V)  
R
DS(ON) < 28m(VGS = 10V)  
DS(ON) < 43m(VGS = 4.5V)  
R
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
5.8  
ID  
4.9  
Pulsed Drain Current B  
IDM  
20  
1.4  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
65  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
A
t 10s  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
RθJA  
A
Steady-State  
Steady-State  
85  
125  
60  
C
RθJL  
43  
Maximum Junction-to-Lead  
Alpha & Omega Semiconductor, Ltd.  

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漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):3.5A;最大功耗(T