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AO3406

更新时间: 2024-11-18 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 109K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3406 数据手册

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AO3406  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3406 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO3406 is Pb-free  
(meets ROHS & Sony 259 specifications). AO3406L  
is a Green Product ordering option. AO3406 and  
AO3406L are electrically identical.  
VDS (V) = 30V  
ID = 3.6A (VGS = 10V)  
R
DS(ON) < 65m(VGS = 10V)  
DS(ON) < 105m(VGS = 4.5V)  
R
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
3.6  
V
A
TA=25°C  
TA=70°C  
ID  
2.9  
Pulsed Drain Current B  
IDM  
15  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

AO3406 替代型号

型号 品牌 替代类型 描述 数据表
FDN357N FAIRCHILD

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