AO3406
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3406 is Pb-free
(meets ROHS & Sony 259 specifications). AO3406L
is a Green Product ordering option. AO3406 and
AO3406L are electrically identical.
VDS (V) = 30V
ID = 3.6A (VGS = 10V)
R
DS(ON) < 65mΩ (VGS = 10V)
DS(ON) < 105mΩ (VGS = 4.5V)
R
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
3.6
V
A
TA=25°C
TA=70°C
ID
2.9
Pulsed Drain Current B
IDM
15
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
Alpha & Omega Semiconductor, Ltd.