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AO3404A PDF预览

AO3404A

更新时间: 2024-09-17 12:24:23
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 178K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3404A 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
风险等级:7.74Base Number Matches:1

AO3404A 数据手册

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AO3404A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3404A uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. The source leads are separated to  
allow a Kelvin connection to the source, which may  
be used to bypass the source inductance.  
VDS (V) = 30V  
ID = 5.8A  
RDS(ON) < 25mΩ  
RDS(ON) < 35mΩ  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
SOT23  
Top View  
Bottom View  
D
S
D
D
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
5.8  
Continuous Drain  
Current A,F  
Pulsed Drain Current B  
ID  
A
4.9  
IDM  
64  
TA=25°C  
TA=70°C  
1.4  
PD  
W
°C  
Power Dissipation  
0.9  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
65  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Steady-State  
Steady-State  
85  
125  
80  
RθJL  
63  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

AO3404A 替代型号

型号 品牌 替代类型 描述 数据表
FDN372S FAIRCHILD

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