Datasheet > AO3400 (KO3400)

AO3400 (KO3400)

更新时间： 2024-11-06 18:09:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1115K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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AO3400 (KO3400) 数据手册

SMD Type

MOSFIECT

N-Channel Enhancement Mode

Field Effect Transistor

AO3400 ^(KO3400)

SOT-23

Unit: mm

+0.1

-0.1

Features

2.9

0.4

+0.1

-0.1

VDS (V) = 30V

ID = 5.8 A (VGS = 10V)

RDS(ON)

28m (VGS = 10V)

33m (VGS = 4.5V)

52m (VGS = 2.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

Gate-Source Voltage

VGS

5.8

Continuous Drain Current

TA=25

TA=70

4.9

Pulsed Drain Current *

Power Dissipation

IDM

1.4

TA=25

TA=70

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction and Storage Temperature Range

RthJA

Rthc

125

TJ, TSTG

-55 to 150

* Repetitive rating, pulse width limited by junction temperature.

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