Datasheet > AO3402A

AO3402A

更新时间： 2024-11-21 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		栅栅极
页数	文件大小	规格书
5页	1102K
描述
漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:4A;栅极-源极阈值电压:1.4V @ 250uA;漏源导通电阻:52mΩ@10V;最大功耗（Ta = 25°C）:350mW;种类:N-Channel;Vgs(th)(V):±12;漏源导通电阻:65mΩ@4.5V

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AO3402A 数据手册

UMW

UMW AO3402A

N-Channel MOSFET

UMW AO3402A

I_D

V_(BR)DSS

R_DS(on)MAX

SOT-23

mΩ@10V

30V

65 Ω@4.5V

85 mΩ@2.5V

DESCRIPTION

1. GATE

The 3402 uses advanced trench technology to provide excellent

R_DS(ON), low gate charge and operation with gate voltage as low as 2.5V.

This device is suitable for use as a load switch or in PWM application.

2. SOURCE

3. DRAIN

FEATURES

APPLICATION

Load Switch and in PWM applications

Lead free product is acquired

Surface mount package

Equivalent Circuit

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Value

Unit

V_DS

V_GS

I_D

Gate-Source Voltage

±12

Continuous Drain Current

Pulsed Drain Current (note 1)

Power Dissipation

I_DM

P_D

0.35

357

Thermal Resistance from Junction to Ambient (note 2)

Junction Temperature

R_θJA

T_J

℃/W

℃

150

Storage Temperature

T_STG

-55~+150

℃

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友台半导体有限公司

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