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AO3402A PDF预览

AO3402A

更新时间: 2024-10-31 17:15:47
品牌 Logo 应用领域
友台半导体 - UMW 栅极
页数 文件大小 规格书
5页 1102K
描述
漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):4A;栅极-源极阈值电压:1.4V @ 250uA;漏源导通电阻:52mΩ@10V;最大功耗(Ta = 25°C):350mW;种类:N-Channel;Vgs(th)(V):±12;漏源导通电阻:65mΩ@4.5V

AO3402A 数据手册

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R
UMW  
UMW AO3402A  
N-Channel MOSFET  
UMW AO3402A  
ID  
V(BR)DSS  
RDS(on)MAX  
SOT-23  
mΩ@10V  
52  
30V  
4A  
m
65 Ω@4.5V  
85 mΩ@2.5V  
DESCRIPTION  
1. GATE  
The 3402 uses advanced trench technology to provide excellent  
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.  
This device is suitable for use as a load switch or in PWM application.  
2. SOURCE  
3. DRAIN  
FEATURES  
APPLICATION  
Load Switch and in PWM applications  
z
z
Lead free product is acquired  
Surface mount package  
z
Equivalent Circuit  
Maximum ratings (Ta=25unless otherwise noted)  
Parameter  
Drain-Source Voltage  
Symbol  
Value  
30  
Unit  
V
VDS  
VGS  
ID  
Gate-Source Voltage  
±12  
V
Continuous Drain Current  
Pulsed Drain Current (note 1)  
Power Dissipation  
4
A
IDM  
PD  
15  
A
0.35  
357  
W
Thermal Resistance from Junction to Ambient (note 2)  
Junction Temperature  
RθJA  
TJ  
/W  
150  
Storage Temperature  
TSTG  
-55~+150  
www.umw-ic.com  
1
友台半导体有限公司  

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