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AO3402L PDF预览

AO3402L

更新时间: 2024-10-29 21:55:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 112K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3402L 数据手册

 浏览型号AO3402L的Datasheet PDF文件第2页浏览型号AO3402L的Datasheet PDF文件第3页浏览型号AO3402L的Datasheet PDF文件第4页 
Rev 2: Nov 2004  
AO3402, AO3402L ( Green Product )  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3402 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications. AO3402L( Green Product ) is offered in  
a lead-free package.  
VDS (V) = 30V  
ID = 4 A  
RDS(ON) < 55m(VGS = 10V)  
RDS(ON) < 70m(VGS = 4.5V)  
RDS(ON) < 110m(VGS = 2.5V)  
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
4
ID  
3.4  
A
Pulsed Drain Current B  
IDM  
15  
1.4  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation A  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
70  
100  
63  
Max  
90  
125  
80  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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