Datasheet > AO3402L

AO3402L

更新时间： 2024-11-19 21:55:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	112K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO3402L 数据手册

Rev 2: Nov 2004

AO3402, AO3402L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3402 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. AO3402L( Green Product ) is offered in

a lead-free package.

V_DS(V) = 30V

I_D= 4 A

R_DS(ON)< 55mΩ (V_GS= 10V)

R_DS(ON)< 70mΩ (V_GS= 4.5V)

R_DS(ON)< 110mΩ (V_GS= 2.5V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±12

T_A=25°C

T_A=70°C

I_D

3.4

Pulsed Drain Current ^B

I_DM

1.4

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

100

Max

125

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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