Datasheet > AO3400AL

AO3400AL

更新时间： 2024-11-05 19:52:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	152K
描述
Transistor

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技术参数
数据手册

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AO3400AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO3400AL 数据手册

AO3400A

N-Channel Enhancement Mode Field Effect Transistor

General Description

FFeeaattuurreess

The AO3400A/L uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. AO3400A and AO3400AL are electrically

identical.

VV (V(V))==3300VV

DDSS

I_DI_D==51.17AA(V(V ==1100VV))

GGSS

RR <<2164.5.5mmΩΩ((VV_GGSS==1100VV))

DDSS(O(ONN) )

RR <<3128mmΩΩ(V(V ==44.5.5VV))

DDSS(O(ONN) )

GGSS

R_DS(ON)< 48mΩ (V_GS= 2.5V)

-RoHS Compliant

-AO3400AL is Halogen Free

Rg,Ciss,Coss,Crss Tested

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^AF

±12

5.7

4.7

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

0.9

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

100

125

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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AO3401A	UMW	获取价格	漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-4.2A;栅极-源