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AO3401L PDF预览

AO3401L

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 181K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO3401L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.79
Is Samacsys:NBase Number Matches:1

AO3401L 数据手册

 浏览型号AO3401L的Datasheet PDF文件第2页浏览型号AO3401L的Datasheet PDF文件第3页浏览型号AO3401L的Datasheet PDF文件第4页 
AO3401  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3401 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications. Standard product AO3401 is Pb-free  
(meets ROHS & Sony 259 specifications). AO3401L  
is a Green Product ordering option. AO3401 and  
AO3401L are electrically identical.  
VDS (V) = -30V  
ID = -4.2 A (VGS = -10V)  
RDS(ON) < 50m(VGS = -10V)  
RDS(ON) < 65m(VGS = -4.5V)  
RDS(ON) < 120m(VGS = -2.5V)  
D
S
TO-236  
(SOT-23)  
Top View  
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±12  
TA=25°C  
TA=70°C  
-4.2  
ID  
-3.5  
A
Pulsed Drain Current B  
IDM  
-30  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
65  
85  
Max  
90  
125  
60  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
43  
Alpha & Omega Semiconductor, Ltd.  

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