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AO3402/A2SSH PDF预览

AO3402/A2SSH

更新时间: 2024-11-18 00:04:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 109K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3402/A2SSH 数据手册

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AO3402  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3402/L uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications. AO3402 and AO3402L are electrically  
identical.  
VDS (V) = 30V  
ID = 4 A (VGS = 10V)  
RDS(ON) < 55m(VGS = 10V)  
RDS(ON) < 70m(VGS = 4.5V)  
RDS(ON) < 110m(VGS = 2.5V)  
-RoHS Compliant  
-AO3402L is Halogen Free  
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
V
A
TA=25°C  
TA=70°C  
4
ID  
3.4  
Pulsed Drain Current B  
IDM  
15  
1.4  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation A  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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