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AO3400A PDF预览

AO3400A

更新时间: 2024-11-05 03:18:55
品牌 Logo 应用领域
阿尔法 - ALPHA 晶体晶体管
页数 文件大小 规格书
4页 151K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3400A 数据手册

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AO3400A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features
The AO3400A uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO3400A is  
V(V)=30V
DS
ID=5.7A(V =10V)  
GS  
R<26.5m(VGS=10V)
DS(ON)
R<32m(V=4.5V)
DS(ON)
GS
Pb-free (meets ROHS & Sony 259 specifications).  
RDS(ON) < 48m(VGS = 2.5V)  
Rg,Ciss,Coss,Crss Tested  
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current AF  
±12  
5.7  
4.7  
25  
V
TA=25°C  
TA=70°C  
A
ID  
Pulsed Drain Current B  
IDM  
A
TA=25°C  
TA=70°C  
1.4  
0.9  
PD  
W
°C  
Power Dissipation  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
100  
63  
125  
80  
Steady-State  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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