Datasheet > AO3400A

AO3400A

更新时间： 2024-11-19 03:18:55

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管
页数	文件大小	规格书
4页	151K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO3400A 数据手册

AO3400A

N-Channel Enhancement Mode Field Effect Transistor

General Description

FFeeaattuurreess

The AO3400A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO3400A is

VV (V(V))==3300VV

DDSS

I_DI_D==51.17AA(V(V ==1100VV))

GGSS

RR <<2164.5.5mmΩΩ((VV_GGSS==1100VV))

DDSS(O(ONN) )

RR <<3128mmΩΩ(V(V ==44.5.5VV))

DDSS(O(ONN) )

GGSS

Pb-free (meets ROHS & Sony 259 specifications).

R_DS(ON)< 48mΩ (V_GS= 2.5V)

Rg,Ciss,Coss,Crss Tested

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^AF

±12

5.7

4.7

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

0.9

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

100

125

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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