Datasheet > AO3400L

AO3400L

更新时间： 2024-02-13 00:00:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	108K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO3400L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AO3400L 数据手册

AO3400

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3400 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO3400 is Pb-free

(meets ROHS & Sony 259 specifications). AO3400L

is a Green Product ordering option. AO3400 and

AO3400L are electrically identical.

V_DS(V) = 30V

I_D= 5.8 A (V_GS= 10V)

R_DS(ON)< 28mΩ (V_GS= 10V)

R_DS(ON)< 33mΩ (V_GS= 4.5V)

R_DS(ON)< 52mΩ (V_GS= 2.5V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±12

V_GS

T_A=25°C

T_A=70°C

5.8

I_D

4.9

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

125

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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AO3401A	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO3401A	UMW	获取价格	漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-4.2A;栅极-源
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