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AO3400A_11

更新时间: 2024-11-05 12:51:27
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 476K
描述
30V N-Channel MOSFET

AO3400A_11 数据手册

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AO3400A  
30V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
30V  
The AO3400A combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is suitable for use as a  
load switch or in PWM applications.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
5.7A  
< 26.5m  
< 32mΩ  
< 48mΩ  
RDS(ON) (at VGS = 4.5V)  
RDS(ON) (at VGS = 2.5V)  
SOT23  
D
Top View  
Bottom View  
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
5.7  
Continuous Drain  
Current  
ID  
4.7  
A
Pulsed Drain Current C  
IDM  
PD  
30  
1.4  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
0.9  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
90  
125  
80  
RθJA  
Steady-State  
Steady-State  
100  
63  
RθJL  
Rev 3: Dec 2011  
www.aosmd.com  
Page 1 of 5  

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