Datasheet > AO3400A_11

AO3400A_11

更新时间： 2024-01-28 02:17:33

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	476K
描述
30V N-Channel MOSFET

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AO3400A_11 数据手册

AO3400A

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO3400A combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is suitable for use as a

load switch or in PWM applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

5.7A

< 26.5mΩ

< 32mΩ

< 48mΩ

R_DS(ON)(at V_GS= 4.5V)

R_DS(ON)(at V_GS= 2.5V)

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

5.7

Continuous Drain

Current

I_D

4.7

Pulsed Drain Current ^C

I_DM

P_D

1.4

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

125

R_θJA

Steady-State

100

R_θJL

Rev 3: Dec 2011

www.aosmd.com

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