生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.75 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-243 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 3.5 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2152 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2153 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 4A I(D) | TO-251 | |
2SK2154 | SANYO |
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Very High-Speed Switching Applications | |
2SK2157 | NEC |
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N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2157C | RENESAS |
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N-CHANNEL MOSFET FOR SWITCHING | |
2SK2157C-T1-AY | RENESAS |
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N-CHANNEL MOSFET FOR SWITCHING | |
2SK2157C-T1-AZ | RENESAS |
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N-CHANNEL MOSFET FOR SWITCHING | |
2SK2158 | NEC |
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N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2158 | KEXIN |
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MOS Field Effect Transistor | |
2SK2158 | TYSEMI |
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Capable of drive gate with 1.5 V Because of high input impedance, there is no need |